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GD25Q127CSJS Datasheet(PDF) 45 Page - GigaDevice Semiconductor (Beijing) Inc.

No. de pieza GD25Q127CSJS
Descripción Electrónicos  3.3V Uniform Sector Dual and Quad Serial Flash
PDF  79 Pages
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Fabricante Electrónico  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
Página de inicio  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD25Q127CSJS Datasheet(HTML) 45 Page - GigaDevice Semiconductor (Beijing) Inc.

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3.3V Uniform Sector
Dual and Quad Serial Flash
GD25Q127C
45
8. ELECTRICAL CHARACTERISTICS
8.1. POWER-ON TIMING
Figure 42. Power-on Timing Sequence Diagram
Vcc(max)
Vcc(min)
VWI
tVSL
Chip Selection is not allowed
Device is fully
accessible
Time
Table 8.1. Power-Up Timing and Write Inhibit Threshold
Symbol
Parameter
Min
Max
Unit
tVSL
VCC (min) To CS# Low
2.5
ms
VWI
Write Inhibit Voltage
1.5
2.5
V
8.2. INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The Status Register
bits are set to 0, except DRV1 bit (S22) is set to 1.
8.3. ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Unit
Ambient Operating Temperature
-40 to 85
-40 to 105
-40 to 125
℃
Storage Temperature
-65 to 150
℃
Applied Input/Output Voltage
-0.6 to VCC+0.4
V
Transient Input/Output Voltage (note: overshoot)
-2.0 to VCC+2.0
V
VCC
-0.6 to 4.2
V



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