2304 datasheet(2/4 Pages) KIA

2 / 4 page

2.5A， 30V

N-CHANNEL MOSFET

KIA

SEMICONDUCTORS

2304

KIA

SEMICONDUCTORS

KIA

SEMICONDUCTORS

4. Electrical characteristics

(TA=25°C,unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Static

Drain-source breakdown voltage

V(BR)DSS

VDS=0V,ID=250

μA

Gate threshold voltage

VGS(th)

VDS=VGS,ID=250μA

Gate- body leakage

IGSS

VGS=+12V,VDS=0V

+100

Zero gate voltage drain current

IDSS

VDS=25V,VGS=0V

μA

On-state drain current a

ID(on)

VDS>4.5V,VGS=10V

VDS>4.5V,VGS=4.5V

Static drain-source on-resistance a

RDS(on)

VGS=10V,ID=2.5A

0.055

VGS=4.5V,ID=2.0A

0.080

Forward transconductance a

gfs

VDS=4.5V,ID=2.5A

4.8

Diode forward voltage

VSD

VGS=0V,IS=1.25A

0.77

1.2

Dynamicb

Total gate charge

VDS=15V,

VGS=5V,ID=2.5A

2.4

Total gate charge

Qgt

VDS=15V,VGS=10V

ID=2.5A

4.5

Gate-source charge

Qgs

0.8

Gate-drain charge

Qgd

1.0

Input capacitance

Ciss

VDS=15V,VGS=0V,

f=1MHz

240

Output capacitance

Coss

110

Reverse transfer capacitance

Crss

Switching

Turn-on delay time

td(on)

VDD=15V,ID =1A,

RL=15Ω,RG=6Ω,

VGEN=10V

Rise time

Turn-off delay time

td(off)

Fall time

Notes

Guaranteed by design, not subject to production testing.

Pulse test; pulse width<300

μs, duty cycle<2%.

2 of4

Rev 1.1 JAN 2014

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