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SSM3J56ACT Datasheet(PDF) 4 Page - Toshiba Semiconductor

No. de pieza SSM3J56ACT
Descripción Electrónicos  MOSFETs Silicon P-Channel MOS
PDF  9 Pages
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

SSM3J56ACT Datasheet(HTML) 4 Page - Toshiba Semiconductor

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SSM3J56ACT
4
5.4.
5.4.
5.4.
5.4. Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, T
Gate Charge Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Qg
Qgs1
Qgd
Test Condition
VDD = -10 V, VGS = -4.5 V,
ID = -800 mA
Min
Typ.
1.6
0.2
0.4
Max
Unit
nC
5.5.
5.5.
5.5.
5.5. Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, T
Source-Drain Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Diode forward voltage
(Note 1)
Symbol
VDSF
Test Condition
ID = 1.4 A, VGS = 0 V
Min
Typ.
1.0
Max
1.3
Unit
V
Note 1: Pulse measurement.
6.
6.
6.
6. Marking
Marking
Marking
Marking
Fig.
Fig.
Fig.
Fig. 6.1
6.1
6.1
6.1 Marking
Marking
Marking
Marking
7.
7.
7.
7. Equivalent Circuit
Equivalent Circuit
Equivalent Circuit
Equivalent Circuit
Fig.
Fig.
Fig.
Fig. 7.1
7.1
7.1
7.1 Equivalent Circuit
Equivalent Circuit
Equivalent Circuit
Equivalent Circuit
2016-09-13
Rev.2.0
©2015 Toshiba Corporation



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