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HM3N30PR Datasheet(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

No. de pieza HM3N30PR
Descripción Electrónicos  Silicon N-Channel Power MOSFET
PDF  10 Pages
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Fabricante Electrónico  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
Página de inicio  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

HM3N30PR Datasheet(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

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Electrical Characteristics（Tc= 25℃ unless otherwise specified）：
OFF Characteristics
Rating
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
VDSS
Drain to Source Breakdown Voltage
VGS=0V, ID=250µA
300
--
--
V
Δ
BVDSS/ΔTJ Bvdss Temperature Coefficient
ID=250uA,Reference25℃
--
0.7
--
V/℃
VDS =300V, VGS= 0V,
Ta = 25℃
--
--
1
IDSS
Drain to Source Leakage Current
VDS =320V, VGS= 0V,
Ta = 125℃
10
µ
A
IGSS(F)
Gate to Source Forward Leakage
VDS =0V, VGS= 30V
--
--
100
nA
IGSS(R)
Gate to Source Reverse Leakage
VDS =0V,VGS =-30V
--
--
-100
nA
ON Characteristics
Rating
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
RDS(ON)
Drain-to-Source On-Resistance
VGS=10V,ID=1A
--
2.6
3.2
Ω
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
2.2
3.2
V
Pulse width tp≤380µs,δ≤2%
Dynamic Characteristics
Rating
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
gfs
Forward Transconductance
VDS=15V, ID =1A
1
S
Ciss
Input Capacitance
--
139
Coss
Output Capacitance
--
21
Crss
Reverse Transfer Capacitance
VGS = 0V VDS = 25V
f = 1.0MHz
--
4.5
pF
Resistive Switching Characteristics
Rating
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
td(ON)
Turn-on Delay Time
--
6
--
tr
Rise Time
--
7
--
td(OFF)
Turn-Off Delay Time
--
30
--
tf
Fall Time
ID =3.0A VDD = 200V
VGS = 10V RG = 25Ω
--
9
--
ns
Qg
Total Gate Charge
--
5
Qgs
Gate to Source Charge
--
0.9
Qgd
Gate to Drain (“Miller”)Charge
ID =3.0A VDD =200V
VGS = 10V
--
2.5
nC
Silicon N-Channel Power MOSFET
HM3N30PR
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com



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