HM30P02K datasheet(2/6 Pages) HMSEMI

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Page

v1.0

Zero Gate Voltage Drain Current

IDSS

VDS=-20V,VGS=0V

-1

μA

Gate-Body Leakage Current

IGSS

VGS=±12V,VDS=0V

±100

On Characteristics

(Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250μA

-0.6

-0.8

-1.4

VGS=-4.5V, ID=-6.5A

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=-2.5V, ID=-5A

mΩ

Forward Transconductance

gFS

VDS=-5V,ID=3A

Dynamic Characteristics

(Note4)

Input Capacitance

Clss

2100

Output Capacitance

Coss

450

Reverse Transfer Capacitance

Crss

VDS=-10V,VGS=0V,

F=1.0MHz

300

Switching Characteristics

(Note 4)

Turn-on Delay Time

td(on)

Turn-on Rise Time

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=-10V, ID=-1A,

VGS=-4.5V,RGEN=6Ω

Total Gate Charge

Gate-Source Charge

Qgs

4.1

Gate-Drain Charge

Qgd

VDS=-10V,ID=-6.5A,VGS=-4.5V

4.3

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

VSD

VGS=0V,IS=-

30A

-1.2

Notes:

Repetitive Rating: Pulse width limited by maximum junction temperature.

Surface Mounted on FR4 Board, t ≤ 10 sec.

Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

Guaranteed by design, not subject to production

Shenzhen H&M Semiconductor Co.Ltd

http：//www.hmsemi.com

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