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D40C7 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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D40C7 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website: www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlington Power Transistor D40C7 DESCRIPTION · High DC Current Gain- : hFE = 10K-70K · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 50V(Min) · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 13 V IC Collector Current-Continuous 0.5 A ICM Collector Current-Peak 1 A PC Collector Power Dissipation @TC=25℃ 6.25 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 20 ℃ /W |
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