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IXFP4N100P Datasheet(PDF) 4 Page - IXYS Corporation |
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IXFP4N100P Datasheet(HTML) 4 Page - IXYS Corporation |
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4 / 5 page ![]() IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFA4N100P IXFP4N100P IXYS REF: F_4N100P(45-744)7-3-13-B Fig. 7. Input Admittance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 VGS - Volts TJ = 125 oC 25 oC - 40 oC VDS = 10V Fig. 8. Transconductance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 ID - Amperes TJ = - 40 oC 125 oC 25 oC VDS = 10V Fig. 9. Forward Voltage Drop of Intrinsic Diode 0 2 4 6 8 10 12 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD - Volts TJ = 125 oC TJ = 25 oC Fig. 10. Gate Charge 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 QG - NanoCoulombs VDS = 500V I D = 2A I G = 10mA Fig. 11. Capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 VDS - Volts f = 1 MHz Ciss Crss Coss Fig. 12. Maximum Transient Thermal Impedance 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds |
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