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IRLU8259 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRLU8259 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor IRLU8259 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA 25 V VGS(th) Gate Threshold Voltage VDS=VGS; ID=0.025mA 1.35 2.35 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=21A 6.3 8.7 mΩ IGSS Gate-Source Leakage Current VGS= ±20V;VDS= 0Vs ± 0.1 μ A IDSS Drain-Source Leakage Current VDS= 20V; VGS= 0V;Tj=25℃ VDS= 20V; VGS= 0V;Tj=125℃ 1 150 μ A VSDF Diode forward voltage ISD=17A, VGS =0V 1.0 V |
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