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HM2300PR Datasheet(PDF) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

No. de pieza HM2300PR
Descripción Electrónicos  N-Channel Enhancement Mode Power MOSFET
PDF  8 Pages
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Fabricante Electrónico  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
Página de inicio  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

HM2300PR Datasheet(HTML) 3 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

  HM2300PR Datasheet HTML 1Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM2300PR Datasheet HTML 2Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM2300PR Datasheet HTML 3Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM2300PR Datasheet HTML 4Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM2300PR Datasheet HTML 5Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM2300PR Datasheet HTML 6Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM2300PR Datasheet HTML 7Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM2300PR Datasheet HTML 8Page - Shenzhen Huazhimei Semiconductor Co., Ltd  
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v1.0
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Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
-
-
±100
nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
0.5
0.65
1.2
V
VGS=2.5V, ID=4.0 A
-
33
40
mΩ
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=
5.5A
-
22
33
mΩ
Forward Transconductance
gFS
VDS=10V,ID=4A
-
10
-
S
Dynamic Characteristics (Note4)
Input Capacitance
Clss
-
500
-
PF
Output Capacitance
Coss
-
300
-
PF
Reverse Transfer Capacitance
Crss
VDS=8V,VGS=0V,
F=1.0MHz
-
140
-
PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
-
20
40
nS
Turn-on Rise Time
tr
-
18
40
nS
Turn-Off Delay Time
td(off)
-
60
108
nS
Turn-Off Fall Time
tf
VDD=10V,ID=1A
VGS=4.5V,RGEN=6Ω
-
28
56
nS
Total Gate Charge
Qg
-
10
15
nC
Gate-Source Charge
Qgs
-
2.3
-
nC
Gate-Drain Charge
Qgd
VDS=10V,ID=3A,VGS=4.5V
-
2.9
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=1A
-
-
1.2
V
Diode Forward Current (Note 2)
IS
-
-
1
A
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. Surface mounted on FR4 Board, t ≤ 10 sec.
3. Pulse test: pulse width ≤ 300μs, duty cycle ≤ 2%.
4. Guaranteed by design, not subject to production
Shenzhen H&M Semiconductor Co.Ltd
http：//www.hmsemi.com
HM2300PR



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