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ADRF5731BCCZN-R7 Datasheet(PDF) 6 Page - Analog Devices

No. de pieza ADRF5731BCCZN-R7
Descripción Electrónicos  2 dB LSB, 4-Bit, Silicon Digital Attenuator,
PDF  17 Pages
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Fabricante Electrónico  AD [Analog Devices]
Página de inicio  http://www.analog.com
Logo AD - Analog Devices

ADRF5731BCCZN-R7 Datasheet(HTML) 6 Page - Analog Devices

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ADRF5731
Data Sheet
Rev. 0 | Page 6 of 17
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Positive Supply Voltage (VDD)
−0.3 V to +3.6 V
Negative Supply Voltage (VSS)
−3.6 V to +0.3 V
Digital Control Input Voltage
−0.3 V to VDD + 0.3 V
RF Input Power1 (f = 10 MHz to 30 GHz,
TCASE = 85°C2)
ATTIN
Steady State Average
27 dBm
Steady State Peak
31 dBm
Hot Switching Average
25 dBm
Hot Switching Peak
28 dBm
ATTOUT
Steady State Average
19 dBm
Steady State Peak
22 dBm
Hot Switching Average
16 dBm
Hot Switching Peak
19 dBm
Temperature
Junction (TJ)
135°C
Storage
−65°C to +150°C
Reflow
260°C
Continuous Power Dissipation (PDISS)
0.5 W
Electrostatic Discharge (ESD) Sensitivity
Human Body Model (HBM)
ATTIN and ATTOUT Pins
500 V
Digital Pins
2000 V
Charged Device Model (CDM)
1250 V
1
For power derating over frequency, see Figure 2 and Figure 3. Applicable for
all ATTIN and ATTOUT power specifications.
2
For 105°C operation, the power handling derates from the TCASE = 85°C
specifications by 3 dB.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
θJC is the junction to case bottom (channel to package bottom)
thermal resistance.
Table 4. Thermal Resistance
Package Type
θJC
Unit
CC-16-6
100
°C/W
POWER DERATING CURVES
Figure 2. Power Derating vs. Frequency, Low Frequency Detail, TCASE = 85°C
Figure 3. Power Derating vs. Frequency, High Frequency Detail, TCASE = 85°C
ESD CAUTION
2
–16
–14
–12
–10
–8
–6
–4
–2
0
1k
10k
100G
10G
100M
1M
1G
10M
100k
FREQUENCY (Hz)
2
–16
–14
–12
–10
–8
–6
–4
–2
0
26
50
48
46
34
40
28
36
42
30
38
44
32
FREQUENCY (GHz)



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