FSB749 datasheet(3/6 Pages) ONSEMI

3 / 6 page

www.fairchildsemi.com

FSB749 Rev. 1.1.0

Thermal Characteristics(3)

Values are at TA = 25°C unless otherwise noted.

Note:

3. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics(4)

Values are at TA = 25°C unless otherwise noted.

Note:

4. Pulse test: pulse width

≤ 300 µs, duty cycle ≤ 2.0%.

Symbol

Parameter

Max.

Unit

Total Device Dissipation

500

RθJA

Thermal Resistance, Junction to Ambient

250

°C/W

Symbol

Parameter

Conditions

Min.

Max.

Unit

BVCEO

Collector-Emitter Breakdown

Voltage

IC = -10 mA

-25

BVCBO

Collector-Base Breakdown Voltage

IC = -100 µA-35

BVEBO

Emitter-Base Breakdown Voltage

IE = -100 µA-5.0

ICBO

Collector Cut-Off Current

VCB = -30 V

-100

VCB = -30 V, TA = 100 °C-10

µA

IEBO

Emitter Cut-Off Current

VEB = -4 V

-100

hFE

DC Current Gain

IC = -50 mA, VCE = -2 V

IC = -1.0 A, VCE = -2 V

100

300

IC = -2.0 A, VCE = -2 V

IC = -6.0 A, VCE = -2 V

VCE(sat)

Collector-Emitter Saturation Voltage

IC = -1 A, IB = -100 mA

-300

IC = -3 A, IB = -300 mA

-600

VBE(sat)

Base-Emitter Saturation Voltage

IC = -1 A, IB = -100 mA

-1.25

VBE(on)

Base-Emitter On Voltage

IC = -1 A, VCE = -2 V

-1

Cob

Output Capacitance

VCB = -10 V, IE = 0,

f = 1 MHz

100

Current Gain - Bandwidth Product

IC = -100 mA, VCE = -5 V,

f = 100 MHz

100

MHz

FSB749 Datasheet(PDF) 3 Page - ON Semiconductor

FSB749 Datasheet(HTML) 3 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6

Datasheet Descarga

Enlace URL