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BUL44F Datasheet(PDF) 5 Page - ON Semiconductor

No. de pieza BUL44F
Descripción Electrónicos  POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS
PDF  10 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

BUL44F Datasheet(HTML) 5 Page - ON Semiconductor

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BUL44 BUL44F
5
Motorola Bipolar Power Transistor Device Data
130
120
110
100
90
80
10
11
12
13
14
15
hFE, FORCED GAIN
9.0
8.0
7.0
6.0
5.0
140
150
160
170
110
90
70
50
10
11
12
13
14
15
hFE, FORCED GAIN
9.0
8.0
7.0
6.0
5.0
130
150
170
190
0.1
1.0
10
10
100
1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.01
TYPICAL SWITCHING CHARACTERISTICS
(IB2 = IC/2 for all switching)
0
200
400
500
2.5
2.0
1.5
1.0
0.5
0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
100
300
600
700
20
40
60
80
100
1.0
0.8
0.6
0.4
0.2
0
TC, CASE TEMPERATURE (°C)
120
140
160
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC–VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of figure 15 is based on TC
= 25
°C; TJ(PK) is variable depending on power level. Second
breakdown pulse limits are valid for duty cycles to 10% but
must be derated when TC > 25°C. Second breakdown limita-
tions do not derate the same as thermal limitations. Allowable
current at the voltages shown on figure 15 may be found at
any case temperature by using the appropriate curve on
figure 17. TJ(PK) may be calculated from the data in figure 20
and 21. At any case temperatures, thermal limitations will
reduce the power than can be handled to values less than the
limitations imposed by second breakdown. For inductive
loads, high voltage and current must be sustained simulta-
neously during turn–off with the base–to–emitter junction re-
verse–biased. The safe level is specified as a reverse–
biased safe operating area (Figure 16). This rating is verified
under clamped conditions so that the device is never
subjected to an avalanche mode.
GUARANTEED SAFE OPERATING AREA INFORMATION
Figure 13. Inductive Fall Time
Figure 14. Inductive Crossover Time
Figure 15. Forward Bias Safe Operating Area
Figure 16. Reverse Bias Switching Safe Operating Area
Figure 17. Forward Bias Power Derating
IC = 0.4 A
IC = 1 A
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
IB(off) = IC/2
VCC = 15 V
VZ = 300 V
LC = 200 µH
IC = 1 A
IC = 0.4 A
10
µs
1
µs
50
µs
1 ms
5 ms
Extended
SOA
DC (BUL44)
DC (BUL44F)
TC ≤ 125°C
GAIN
≥ 4
LC = 500 µH
–1.5 V
–5 V
0 V
SECOND BREAK–
DOWN DERATING
THERMAL DERATING
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C



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