SSM3K44FS

2014-03-01

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K44FS

High Speed Switching Applications

Analog Switching Applications

• Compact package suitable for high-density mounting

• Low ON-resistance

Characteristic

Symbol

Rating

Unit

Drain-Source voltage

30

V

Gate-Source voltage

±20

V

DC

100

Drain current

Pulse

200

mA

Drain power dissipation (Ta

= 25°C)

150

mW

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: mounted on an FR4 board (25.4 mm

Marking

Equivalent Circuit

Handling Precaution

When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-2H1B

Weight: 2.4 mg (typ.)

N T

1

2

3

12

3

Start of commercial production

2009-12