CMBT3905 datasheet(1/3 Pages) CDIL

No. de pieza	CMBT3905

Descripción Electrónicos	SILICON EPITAXIAL TRANSISTOR

PDF	3 Pages

Scroll/Zoom	100%

Fabricante Electrónico	CDIL [Continental Device India Limited]

Página de inicio	http://www.cdilsemi.com

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1 / 3 page

Continental Device India Limited

Data Sheet

Page 1 of 3

SILICON EPITAXIAL TRANSISTOR

P–N–P transistor

Marking

CMBT3905 = 2Y

ABSOLUTE MAXIMUM RATINGS

Collector–base voltage (open emitter)

–VCBO

max.

40 V

Collector–emitter voltage (open base)

–VCEO

max.

40 V

Emitter–base voltage (open collector)

–VEBO

max.

5 V

Collector current (d.c.)

–I C

max.

200 mA

Total power dissipation up to Tamb = 60 °C

Ptot

max.

250 mW

D.C. current gain

–IC = 10 mA; –VCE = 1 V

hFE

50 to 150

Transition frequency at f = 100 MHz

–IC = 10 mA; –VCE = 20 V

fT

min.

200 MHz

CMBT3905

PACKAGE OUTLINE DETAILS

ALL DIMENSIONS IN mm

Pin configuration

1 = BASE

2 = EMITTER

3 = COLLECTOR

3

2

1

SOT-23 Formed SMD Package

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

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CMBT3905 Datasheet(PDF) 1 Page - Continental Device India Limited

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