Feb.1999

23

40

20

23

44

60

80

100

30

10

50

70

90

0

3.8

0.6

1.4

2.2

3.0

1.0

1.8

2.6

3.4

7

5

3

2

7

5

3

2

7

5

3

2

MAXIMUM ON-STATE CHARACTERISTICS

ON-STATE VOLTAGE (V)

RATED SURGE ON-STATE CURRENT

CONDUCTION TIME

(CYCLES AT 60Hz)

MITSUBISHI SEMICONDUCTOR

〈TRIAC〉

BCR8PM

MEDIUM POWER USE

INSULATED TYPE, PLANAR PASSIVATION TYPE

V2. Measurement using the gate trigger characteristics measurement circuit.

V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.

°C/W.

Test conditions

Voltage

class

8

12

(V)

400

600

Min.

—

10

—

10

Commutating voltage and current waveforms

(inductive load)

Symbol

R

L

R

L

Unit

V/

µs

1. Junction temperature

°C

2. Rate of decay of on-state commutat-

ing current

3. Peak off-state voltage

Symbol

Parameter

Repetitive peak off-state current

On-state voltage

Gate trigger voltage

V2

Gate non-trigger voltage

Thermal resistance

Critical-rate of rise of off-state

commutating voltage

Test conditions

Unit

mA

V

V

V

V

mA

mA

mA

V

°C/W

V/

µs

Typ.

—

—

—

—

—

—

—

—

—

—

—

!

@

#

!

@

#

ELECTRICAL CHARACTERISTICS

Limits

Min.

—

—

—

—

—

—

—

—

0.2

—

V3

Max.

2.0

1.6

1.5

1.5

1.5

30

V5

30

V5

—

3.7

—

SUPPLY

VOLTAGE

TIME

TIME

TIME

MAIN CURRENT

MAIN

VOLTAGE

(di/dt)c

(dv/dt)c

PERFORMANCE CURVES