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SC2065PT Datasheet(PDF) 1 Page - Jinan Jing Heng Electronics Co., Ltd. |
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SC2065PT Datasheet(HTML) 1 Page - Jinan Jing Heng Electronics Co., Ltd. |
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1 / 5 page ![]() R SC2065PT Silicon Carbide Schottky Diode Reverse Voltage - 650 Volts Forward Current - 20.0Amperes FEATURES S E M I C O N D U C T O R JINAN JINGHENG ELECTRONICS CO., LTD. HTTP ://WWW.JINGHENG.CN TYPICAL APPLICATIONS 5-1 SiC Schottky Diode has no switching loss,provides improved system efficiency against Si diodes by utilizing new semiconductor material-Silicon Carbide,enables higher operating frequency, and helps increasing power density and reduction of system size /cost.Its high reliability ensures robust operation during surge or over_voltage conditions. DESCRIPTION Max Junction Temperature 175°C High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery MECHANICAL DATA Case: JEDEC TO-247AB Molding compound meets UL94V-0 flammability rating Terminals: Lead solderable per J-STD-002 and JESD22-B102 Polarity: As marked Mounting Torque: 10 in-Ibs maximum General Purpose SMPS, Solar inverter, UPS Power Switching Circuits Type V D C I F Qc T ,max j Package SC2065PT 650V 10A/20A 25nC/50nC 175℃ TO- 247AB KEY PERFORMANCE AND PACKAGE PARAMETERS( leg/device) Dimensions in inches and (millimeters) TO-247AB 0.645(16.4) 0.225(5.7) 0.055(1.4) 0.126(3.2) 0.146(3.7) 0.245(6.2) 30 10 10 TYP. BOTH SIDES 1 REF. BOTH SIDES 0.201(5.1) 0.030(0.76) 0.618(15.7) 0.205(5.2) 0.043(1.1) 0.114(2.9) 0.128(3.0) DIA 0.225(5.7) 0.189(4.8) 0.020(0.51) 1 2 3 0.795(20.2) 0.840(21.3) 0.775(19.6) 0.800(20.3) 0.083(2.10) 0.074(1.88) 0.098(2.50) 0.089(2.25) 0.087(2.2) 0.075(1.9) 1 2 3 CASE 1 2 3 |
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