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2SC6144 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC6144 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc Website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistors 2SC6144 DESCRIPTION · Collector-Emitter Saturation Voltage- : VCE(sat) = 0.36V(Max.)@IC= 6A · Collector-Emitter Breakdown Voltage- : V(BR) CEO= 50V(Min) · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Pulse 13 A IB Base Current 2 A PC Collector Power Dissipation TC=25℃ 25 W Tj Max.Junction Temperature 150 ℃ Tstg Storage Ttemperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5 ℃ /W |
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