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ISCNH145M Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza ISCNH145M
Descripción Electrónicos  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCNH145M Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
ISCNH145M
DESCRIPTION
·
Static drain-source on-resistance:
RDS(on)≤65mΩ
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for applications such as switching power
Supplies ,motor controls ,inverters ,choppers ,audio
amplifiers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±
20
V
ID
Drain Current-continuous@ TC=25℃
48
A
IDM
Pulsed Drain Current
144
A
Ptot
Total Dissipation@TC=25℃
300
W
Tj
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.42
℃
/W


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