NXP Semiconductors

PMDPB38UNE

20 V dual N-channel Trench MOSFET

PMDPB38UNE

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Product data sheet

26 September 2012

2 / 13

2. Pinning information

Table 2.

Pinning information

Pin

Symbol Description

Simplified outline

Graphic symbol

1

S1

source TR1

2

G1

gate TR1

3

D2

drain TR2

4

S2

source TR2

5

G2

gate TR2

6

D1

drain TR1

7

D1

drain TR1

8

D2

drain TR2

Transparent top view

6

7

8

5

4

1

2

3

DFN2020-6 (SOT1118)

017aaa256

D1

S1

G1

D2

S2

G2

3. Ordering information

Table 3.

Ordering information

Package

Type number

Name

Description

Version

PMDPB38UNE

DFN2020-6

plastic thermal enhanced ultra thin small outline package; no

leads; 6 terminals; body 2 x 2 x 0.65 mm

SOT1118

4. Marking

Table 4.

Marking codes

Type number

Marking code

PMDPB38UNE

1S

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per transistor

drain-source voltage

-

20

V

gate-source voltage

-8

8

V

[1]

-

5

A

[1]

-

4

A

drain current

[1]

-

2.6

A

peak drain current

-

16

A