BC54PAS datasheet(8/14 Pages) NEXPERIA

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BC54_55_56PAS_SER

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Product data sheet

Rev. 1 — 11 November 2014

8 of 14

Nexperia

BC54PAS; BC55PAS; BC56PAS

45V/60V/80V, 1A NPN medium power transistors

Characteristics

[1]

Pulse test: tp  300 s;  0.02

Table 8.

Characteristics

Tamb =25 C unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off current

VCB =30V; IE = 0 A

100

VCB =30V; IE =0A; Tj = 150 C

--10

A

IEBO

emitter-base cut-off current

VEB =5V; IC = 0 A

100

hFE

DC current gain

VCE =2V; IC =5mA

VCE =2V; IC =150 mA

[1] 63

250

VCE =2 V; IC =500 mA

[1] 40

hFE selection -10

VCE =2V; IC =150 mA

[1] 63

160

hFE selection -16

VCE =2V; IC =150 mA

[1] 100

250

VCEsat

collector-emitter saturation

voltage

IC = 500 mA; IB =50mA

[1] -

500

VBE

base-emitter voltage

VCE =2V; IC =500 mA

[1] --1

collector capacitance

VCB =10V; IE =ie = 0A; f=1MHz

transition frequency

VCE =5V; IC = 50 mA; f = 100 MHz

100

180

MHz

VCE =2V

(1) Tamb = 100 C

(2) Tamb =25 C

(3) Tamb = 55 C

Tamb =25 C

Fig 7.

DC current gain as a function of collector

current; typical values

Fig 8.

Collector current as a function of

collector-emitter voltage; typical values

006aac691

100

200

300

hFE

IC (A)

10–4

10–3

10–1

10–2

(1)

(2)

(3)

VCE (V)

2.0

1.6

0.8

1.2

0.4

006aaa084

0.8

0.4

1.2

1.6

(A)

IB (mA) = 50

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