MMBT5401 datasheet(2/4 Pages) PJSEMI

No. de pieza	MMBT5401

Descripción Electrónicos	PNP Transistor

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Fabricante Electrónico	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

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MMBT

5401

PNP Transistor

2 / 4

Electrical Characteristics at TA = 25℃

Parameter

Max.

Unit

DC Current Gain

at -VCE = 5 V, -IC = 1 mA

at -VCE = 5 V, -IC = 10 mA

at -VCE = 5 V, -IC = 50 mA

hFE

240

Collector Base Cutoff Current

at -VCB = 120 V

-ICBO

Emitter Base Cutoff Current

at -VEB = 3 V

-IEBO

Collector Base Breakdown Voltage

at -IC = 100 µA

-V(BR)CBO

160

Collector Emitter Breakdown Voltage

at -IC = 1 mA

-V(BR)CEO

150

Emitter Base Breakdown Voltage

at -IE = 10 µA

-V(BR)EBO

Collector Emitter Saturation Voltage

at -IC = 10 mA, -IB = 1 mA

at -IC = 50 mA, -IB = 5 mA

-VCE(sat)

0.2

0.5

Base Emitter Saturation Voltage

at -IC = 10 mA, -IB = 1 mA

at -IC = 50 mA, -IB = 5 mA

-VBE(sat)

Gain Bandwidth Product

at -VCE = 10 V, -IC = 10 mA, f = 100 MHz

100

300

MHz

Output Capacitance

at -VCB =10 V, f = 1 MHz

Cob

Symbol

Min.

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Revision：1.1 Jan-2019

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