FTA1663 datasheet(1/2 Pages) FS

No. de pieza	FTA1663

Descripción Electrónicos	PNP Transistor

PDF	2 Pages

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Fabricante Electrónico	FS [First Silicon Co., Ltd]

Página de inicio	http://www.firstsilicon.co.kr/

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1 / 2 page

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-30

V

VCEO

Collector-Emitter Voltage

-30

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-1.5

A

PC

Collector Power Dissipation

500

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-1mA, IE=0

-30

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-10mA, IB=0

-30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-1mA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-30V, IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V, IC=0

-0.1

μA

DC current gain

hFE

VCE=-2V, IC=-0.5A

100

320

Collector-emitter saturation voltage

VCE(sat)

IC=-1.5A, IB=-30mA

-2

V

Base-emitter voltage

VBE

VCE=-2V, IC=-0.5A

-1

V

Transition frequency

fT

VCE=-2V, IC=-500mA

120

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0,f=1MHz

50

MHz

2011. 08. 24

1/2

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

FTA1663

PNP Transistor

FEATURES

High current applications

Complementary to FTC4375

CLASSIFICATION OF

hFE(1)

Rank

Y

O

Range

0

2

3

-

0

6

1

0

2

-

0

1

Marking

Y

H

O

H

SOT-89

DIM

A

B

D

E

G

H

K

4.70 MAX

2.50 0.20

1.70 MAX

0.45+0.15/-0.10

4.25 MAX

1.50 0.10

0.40 TYP

1.7 MAX

0.7 MIN

0.5+0.15/-0.10

C

J

G

D

A

C

K

F

MILLIMETERS

H

F

1

2

3

F

D

+

_

+

_

1. BASE

2. COLLECTOR

3. EMITTER

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