DF2B6M4ASL

2

5.

5.

5.

5. Example of Circuit Diagram

Example of Circuit Diagram

Example of Circuit Diagram

Example of Circuit Diagram

6.

6.

6.

6. Quick Reference Data

Quick Reference Data

Quick Reference Data

Quick Reference Data

Characteristics

Working peak reverse voltage

Total capacitance

Dynamic resistance

Electrostatic discharge voltage

(IEC61000-4-2) (Contact)

Symbol

Note

(Note 1)

(Note 2)

(Note 3)

Test Condition







Min









Typ.



0.15

0.7



Max

5.5

0.2



15

Unit

V

pF

Ω

kV

Note 1: Recommended operating condition.

Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of

Note 3: Criterion: No damage to devices.

2019-08-05

Rev.1.0

©2019

Toshiba Electronic Devices & Storage Corporation