M58LT128GST datasheet(1/98 Pages) STMICROELECTRONICS

No. de pieza	M58LT128GST

Descripción Electrónicos	128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Secure Flash Memories

PDF	98 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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1 / 98 page

PRELIMINARY DATA

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

Rev 1.0

September 2005

1/98

1

M58LT128GST

M58LT128GSB

128Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst)

1.8V Supply Secure Flash Memories

Features Summary

■

SUPPLY VOLTAGE

–VDD = 1.7 to 2.0V for program, erase and

read

–VDDQ = 2.7 to 3.6V for I/O Buffers

–VPP = 9V for fast program

■

SYNCHRONOUS / ASYNCHRONOUS READ

– Random Access: 110ns

– Asynchronous Page Read: 25ns.

– Synchronous Burst Read: 52MHz

■

SYNCHRONOUS BURST READ SUSPEND

■

PROGRAMMING TIME

– 10µs typical Word program time using

Buffer Enhanced Factory Program

command

■

MEMORY ORGANIZATION

– Multiple Bank Memory Array:

8 Mbit Banks

– Parameter Blocks (Top or Bottom location)

■

DUAL OPERATIONS

– program/erase in one Bank while read in

others

– No delay between read and write

operations

■

HARDWARE PROTECTION

– All Blocks Write Protected when VPP≤VPPLK

■

SECURITY

– Software Security Features

– 64-bit Unique Device Identifier

– 2112 bits of User-Programmable OTP

memory

■

COMMON FLASH INTERFACE (CFI)

■

100,000 PROGRAM/ERASE CYCLES per

BLOCK

■

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code:

M58LT128GST: 88C6h

M58LT128GSB: 88C7h

■

ECOPACK® PACKAGE AVAILABLE

BGA

TBGA64 (ZA)

10 x 13mm

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M58LT128GST Datasheet(PDF) 1 Page - STMicroelectronics

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