UT3N06G-AE3-R datasheet(3/9 Pages) VBSEMI

No. de pieza	UT3N06G-AE3-R

Descripción Electrónicos	N-Channel 60-V (D-S) MOSFET

PDF	9 Pages

Scroll/Zoom	100%

Fabricante Electrónico	VBSEMI [VBsemi Electronics Co.,Ltd]

Página de inicio	www.VBsemi.com

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

1234

VDS - Drain-to-Source Voltage (V)

VGS =10thru 5 V

VGS =2 V

VGS =3 V

VGS =4 V

0.04

0.08

0.12

0.16

0.20

ID - Drain Current (A)

VGS =10 V

VGS =4.5 V

1234

ID = 2 .5 A

Qg - Total Gate Charge (nC)

VDS =48V

VDS =30 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.7

1.4

2.1

2.8

3.5

VGS - Gate-to-Source Voltage (V)

TC = 125 °C

TC =25 °C

TC = - 55 °C

Crss

120

180

240

300

102030

405060

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

100

125

150

TJ -Junction Temperature (°C)

VGS =10 V,I D = 2. 5 A

VGS =4.5 V,ID =1.7 A

UT3N06G-AE3-R

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