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ASD33C Datasheet(PDF) 4 Page - Applied Power Microelectronics Co.,Ltd.

No. de pieza ASD33C
Descripción Electrónicos  1-Line Bi-directional TVS Diode
PDF  7 Pages
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Fabricante Electrónico  APMICRO [Applied Power Microelectronics Co.,Ltd.]
Página de inicio  http://www.appliedpowermicro.com/
Logo APMICRO - Applied Power Microelectronics Co.,Ltd.

ASD33C Datasheet(HTML) 4 Page - Applied Power Microelectronics Co.,Ltd.

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Revision 12/2017
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ASD15C
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Working Voltage
VRWM
15
V
Breakdown Voltage
VBR
16.7
V
IT = 1mA
Reverse Leakage Current
IR
0.2
µA
VRWM = 15V
Clamping Voltage
VC
18
V
IPP = 1A (8 x 20µs pulse)
Clamping Voltage
VC
25
V
IPP = 16A (8 x 20µs pulse)
Peak Pulse Current
Ipp
16
A
tp = 8/20μs
Junction Capacitance
CJ
80
pF
VR = 0V, f = 1MHz
ASD24C
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Working Voltage
VRWM
24
V
Breakdown Voltage
VBR
27
V
IT = 1mA
Reverse Leakage Current
IR
0.2
µA
VRWM = 24V
Clamping Voltage
VC
40
V
IPP = 1A (8 x 20µs pulse)
Clamping Voltage
VC
50
V
IPP = 10A (8 x 20µs pulse)
Peak Pulse Current
Ipp
8
A
tp = 8/20μs
Junction Capacitance
CJ
50
pF
VR = 0V, f = 1MHz
ASD33C through ASD40C
ASD18C
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Working Voltage
VRWM
18
V
Breakdown Voltage
VBR
19.8
V
IT = 1mA
Reverse Leakage Current
IR
0.2
µA
VRWM = 18V
Clamping Voltage
VC
25
V
IPP = 1A (8 x 20µs pulse)
Clamping Voltage
VC
38
V
IPP = 13A (8 x 20µs pulse)
Peak Pulse Current
Ipp
13
A
tp = 8/20μs
Junction Capacitance
CJ
60
pF
VR = 0V, f = 1MHz



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