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ASM712H Datasheet(PDF) 2 Page - Applied Power Microelectronics Co.,Ltd. |
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ASM712H Datasheet(HTML) 2 Page - Applied Power Microelectronics Co.,Ltd. |
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2 / 6 page ![]() Revision 2.1 2 of 6 Absolute Maximum Ratings (TA=25°C unless otherwise specified) Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Peak Pulse Power (8/20µs) Ppk 600-1000 W Peak Pulse Current (tp = 8/20μs), Pin 1 or 2 to Pin 3 Peak Pulse Current (tp = 8/20μs), Pin 3 to Pin 1 or 2 Ipp 36 36 A ESD per IEC 61000−4−2 (Air) ESD per IEC 61000−4−2 (Contact) VESD ±30 ±30 kV Operating Temperature Range TJ −55 to +125 °C Storage Temperature Range Tstg −55 to +150 °C Pin 1 to 3 and 2 to 3 (12V TVS) Pin 3 to 1 and 3 to 2 (7V TVS) Parameter Symb ol Min Typ Max Min Typ Max Unit Test Condition Reverse Working Voltage VRWM 12 7 V Breakdown Voltage VBR 13.3 7.5 V IT = 1mA Reverse Leakage Current IR 0.5 0.5 μA VR = VRWM Clamping Voltage VC 19 10 V IPP = 1A (8 x 20µs pulse) Clamping Voltage VC 25 15 V IPP = 25A (8 x 20µs pulse) Clamping Voltage VC 28 17 V IPP = 36A (8 x 20µs pulse) Junction Capacitance CJ 75 75 pF VR = 0V, f = 1MHz Junction Capacitance CJ 50 60 pF VR = VRWM, f = 1MHz ASM712H |
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