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STM8319 Datasheet(PDF) 10 Page - VBsemi Electronics Co.,Ltd

No. de pieza STM8319
Descripción Electrónicos  N- and P-Channel 30 V (D-S) MOSFET
PDF  14 Pages
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Fabricante Electrónico  VBSEMI [VBsemi Electronics Co.,Ltd]
Página de inicio  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

STM8319 Datasheet(HTML) 10 Page - VBsemi Electronics Co.,Ltd

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P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
2
4
6
8
10
0
25
50
75
100
125
150
T
C - Case Temperature (°C)
Power Derating, Junction-to-Foot
0.0
0.8
1.6
2.4
3.2
4.0
0
25
50
75
100
125
150
T
C - Case Temperature (°C)
Power Derating, Junction-to-Ambient
0.0
0.3
0.6
0.9
1.2
1.5
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
STM8319
10



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