FTC5658R datasheet(2/5 Pages) FS

No. de pieza	FTC5658R

Descripción Electrónicos	NPN Silicon General Purpose Amplifier Transistor

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrónico	FS [First Silicon Co., Ltd]

Página de inicio	http://www.firstsilicon.co.kr/

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2 / 5 page

FTC5658

2018. 08. 29

2/5

Revision No : 1

ELECTRICAL CHARACTERISTICS (TA=25℃)

Characteristic

Symbol

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage (Ic= 50uAdc, IE= 0)

V(BR)CBO

−

Vdc

Collector-Emitter Breakdown Voltage (Ic=1.0mAdc, IE= 0)

V(BR)CEO

−

Vdc

Emitter-Base Breakdown Voltage (Ic= 50uAdc, IE= 0)

V(BR)EBO

5.0

−

Vdc

Collector-Base Cutoff Current (Vcb= 30 Vdc, IE= 0)

ICBO

−

0.5

Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IE = 0)

IEBO

−

0.5

Collector-Emitter Saturation Voltage (Note 2)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat)

−

0.4

Vdc

DC Current Gain (Note 2)

(VCE = 6.0 Vdc, IC = 1.0 mAdc)

FTC5658Q

(VCE = 6.0 Vdc, IC = 1.0 mAdc)

hFE

120

180

−

270

390

−

Transition Frequency (VCE=12Vdc, IC=2.0mAdc, f=30MHz)

−

180

−

MHz

Output Capacitance (VCB =12 Vdc, IC =0 Adc, f =1.0 MHz)

COB

−

2.0

−

2. Pulse Test: Pulse Width≤300us, D.C. ≤2%.

FTC5658R

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