TS12N30CS datasheet(2/4 Pages) TSC

No. de pieza	TS12N30CS

Descripción Electrónicos	DC-DC Converter Control and Synchronous AceFET

PDF	4 Pages

Scroll/Zoom	100%

Fabricante Electrónico	TSC [Taiwan Semiconductor Company, Ltd]

Página de inicio	http://www.taiwansemi.com

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Electrical Characteristics

TA=25°C unless otherwise specified

Symbol

Parameter

Test Condition

Min Typ. Max

Units

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V,

ID= 250 uA

IGSS

Gate-Body Leakage

VGS = +12, VDS=0V

+150

IDSS

Zero Gate Voltage Drain Current Tj = 150°C, VDS =30V , VGS=0 V

250

IDDS

Drain to Drain Sense Leakage

Tj = 150°C, VDS =30V , VGS=0 V

250

RDS (on)

Static Drain-Source On-Resistance

VGS = 4.5 V, ID = 12A

RDSDS (on) Drain Sense On-Resistance

VGS = 4.5 V, ID = 0.35A

210

VGS (th)

Gate Threshold Voltage

VDS = VGS , ID = 250uA

1.3

Total Gate Charge

VDS = 30V , VGS = 4.5V, ID=12A

Gate Resistance

VDS = 0V , f = 1MHz

0.4

Ohms

Coss

Output Capacitance

VDS = 30V , VGS = 0V, f = 1MHz

650

Ciss

Input Capacitance

VDS = 30V , VGS = 0V, f = 1MHz

1500

Crss

Reverse transfer capacitance

VDS = 30V , VGS = 0V, f = 1MHz

220

trr

Reverse Recovery time

If = 12A , di/dt = 100A / us

Source-Drain Diode

Tj = 150°C

VSD

Forward On-Voltage

IS = 12A, VGS = 0V

0.75

Source-Drain Diode

ID(on)

On-State Drain Current

VGS = 4.5V , VDS = 1V

PRELIMINARY DATA SHEET

6/19/03 Rev0

Eas

Avalanche Energy UIS

Single Pulse 10us , VDS> BVDSS

2.5

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