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RN4903 Datasheet(PDF) 2 Page - Toshiba Semiconductor

No. de pieza RN4903
Descripción Electrónicos  Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
PDF  5 Pages
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Fabricante Electrónico  TOSHIBA [Toshiba Semiconductor]
Página de inicio  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN4903 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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RN4903
2001-06-07
2
Q1, Q2 Common Maximum Ratings (Ta = 25
°°°°C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
PC *
200
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55~150
°C
*
Total rating
Marking
Equivalent Circuit (Top View)
Q1 Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICBO
―
VCB = −50V, IE = 0
―
―
−100
Collector cut-off current
ICEO
―
VCE = −50V, IB = 0
―
―
−500
nA
Emitter cut-off current
IEBO
―
VEB = −10V, IC = 0
−0.17
―
−0.33
mA
DC current gain
hFE
―
VCE = −5V, IC = −10mA
70
―
―
―
Collector-emitter saturation voltage
VCE (sat)
―
IC = −5mA, IB = −0.25mA
―
−0.1
−0.3
V
Input voltage (ON)
VI (ON)
―
VCE = −0.2V, IC = −5mA
−1.3
―
−3.0
V
Input voltage (OFF)
VI (OFF)
―
VCE = −5V, IC = −0.1mA
−1.0
―
−1.5
V
Transition frequency
fT
―
VCE = −10V, IC = −5mA
―
200
―
MHz
Collector output capacitance
Cob
―
VCB = −10V, IE = 0, f = 1MHz
―
3
6
pF



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