TPC6103

2004-07-06

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)

TPC6103

Notebook PC Applications

Portable Equipment Applications

= 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

−12

V

−12

V

Gate-source voltage

±8

V

DC

(Note 1)

−5.5

Drain current

Pulse (Note 1)

−22

A

Drain power dissipation

(t

= 5 s)

(Note 2a)

2.2

W

Drain power dissipation

(t

= 5 s)

(Note 2b)

0.7

W

Single pulse avalanche energy

(Note 3)

5.3

mJ

Avalanche current

−2.75

A

Repetitive avalanche energy (Note 4)

0.22

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance, channel to

ambient (t

= 5 s)

(Note 2a)

56.8

°C/W

Thermal resistance, channel to

ambient (t

= 5 s)

(Note 2b)

178.5

°C/W

Note 1, (ote 2, Note 3, Note 4 and Note 5: See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3T1A

Weight: 0.011 g (typ.)

Circuit Configuration

6

4

1

2

3

5