FPD1000AS datasheet(1/8 Pages) FILTRONIC

No. de pieza	FPD1000AS

Descripción Electrónicos	1W PACKAGED POWER PHEMT

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Fabricante Electrónico	FILTRONIC [Filtronic Compound Semiconductors]

Página de inicio	http://www.filtronic.co.uk/

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FPD1000AS

1W PACKAGED POWER PHEMT

Phone: +1 408 850-5790

http:// www.filtronic.co.uk/semis

Revised: 05/26/05

Fax: +1 408 850-5766

Email: sales@filcsi.com

•

PERFORMANCE (1.8 GHz)

♦ 31 dBm Output Power (P1dB)

♦ 15 dB Power Gain (G1dB)

♦ 43 dBm Output IP3

♦ -42 dBc WCDMA ACPR at 21 dBm PCH

♦ 10V Operation

♦ 50% Power-Added Efficiency

♦ Evaluation Boards Available

♦ Design Data Available on Website

♦ Suitable for applications to 5 GHz

•

DESCRIPTION AND APPLICATIONS

The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron

Mobility Transistor (pHEMT), optimized for power applications in L-Band. The surface-mount

package has been optimized for low parasitics.

Typical applications include drivers or output stages in PCS/Cellular base station transmitter

amplifiers, as well as other power applications in WLL/WLAN amplifiers.

•

ELECTRICAL SPECIFICATIONS AT 22°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL

Power at 1dB Gain Compression

P1dB

VDS = 10V; IDS = 200 mA

ΓS and ΓL tuned for Optimum IP3

30

31

dBm

Power Gain at dB Gain Compression

G1dB

VDS = 10V; IDS = 200 mA

ΓS and ΓL tuned for Optimum IP3

13.5

15.0

Maximum Stable Gain

S21/S12

MSG

VDS = 10 V; IDS = 200mA

PIN = 0dBm, 50Ω system

20

dB

Power-Added Efficiency

at 1dB Gain Compression

PAE

VDS = 10V; IDS = 200 mA

ΓS and ΓL tuned for Optimum IP3

50

%

3rd-Order Intermodulation Distortion

ΓS and ΓL tuned for Optimum IP3

IM3

VDS = 10V; IDS = 200 mA

POUT = 19 dBm (single-tone level)

-46

dBc

Saturated Drain-Source Current

IDSS

VDS = 1.3 V; VGS = 0 V

480

650

800

mA

Maximum Drain-Source Current

IMAX

VDS = 1.3 V; VGS ≅ +1 V

1100

mA

Transconductance

GM

VDS = 1.3 V; VGS = 0 V

720

mS

Gate-Source Leakage Current

IGSO

VGS = -3 V

20

50

µA

Pinch-Off Voltage

|VP|

VDS = 1.3 V; IDS = 2.4 mA

0.7

0.9

1.4

V

Gate-Source Breakdown Voltage

|VBDGS|

IGS = 2.4 mA

6

8

V

Gate-Drain Breakdown Voltage

|VBDGD|

IGD = 2.4 mA

20

22

V

Thermal Resistivity (channel-to-case)

ΘCC

See Note on following page

25

°C/W

SEE PACKAGE OUTLINE FOR

MARKING CODE

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