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TSM4835CS Datasheet(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

No. de pieza TSM4835CS
Descripción Electrónicos  30V P-Channel Enhancement Mode MOSFET
PDF  5 Pages
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Fabricante Electrónico  TSC [Taiwan Semiconductor Company, Ltd]
Página de inicio  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM4835CS Datasheet(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSM4835
2-5
2003/12 rev. A
Electrical Characteristics
Ta = 25
oC, unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = - 250uA
BVDSS
- 30
--
--
V
Drain-Source On-State Resistance
VGS = - 10V, ID = -9.5A
RDS(ON)
--
13
18
Drain-Source On-State Resistance
VGS = - 4.5V, ID = -7.5A
RDS(ON)
--
22
30
mΩ
Gate Threshold Voltage
VDS = VGS, ID = - 250uA
VGS(TH)
- 1
--
- 3
V
Zero Gate Voltage Drain Current
VDS = - 30V, VGS = 0V
IDSS
--
--
- 1.0
uA
Gate Body Leakage
VGS = ± 25V, VDS = 0V
IGSS
--
--
± 100
nA
Forward Transconductance
VDS = - 15V, ID = - 8A
gfs
--
22
--
S
Dynamic
VDS = - 15V, ID = - 4.6A,
VGS = - 5V
--
23
34
Total Gate Charge
Qg
--
54
60
Gate-Source Charge
Qgs
--
8.5
--
Gate-Drain Charge
VDS = - 15V, ID = - 4.6A,
VGS = - 10V
Qgd
--
10.3
--
nC
Turn-On Delay Time
td(on)
--
24
30
Turn-On Rise Time
tr
--
12
30
Turn-Off Delay Time
td(off)
--
78
120
Turn-Off Fall Time
VDD = - 15V, RL = 15Ω,
ID = - 1A, VGEN = - 10V,
RG = 6Ω
tf
--
37
80
nS
Input Capacitance
Ciss
--
2520
--
Output Capacitance
Coss
--
490
--
Reverse Transfer Capacitance
VDS = - 15V, VGS = 0V,
f = 1.0MHz
Crss
--
330
--
pF
Source-Drain Diode
Max. Diode Forward Current
IS
--
--
- 2.1
A
Diode Forward Voltage
IS = - 2.1A, VGS = 0V
VSD
--
- 0.77
- 1.2
V
Note : pulse test: pulse width <=300uS, duty cycle <=2%



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