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IXTY3N60P Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza IXTY3N60P
Descripción Electrónicos  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IXTY3N60P Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
IXTY3N60P
·
FEATURES
·
Static drain-source on-resistance:
RDS(on) ≤ 2.9Ω@VGS=10V
·
Fully characterized avalanche voltage and current
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·
APPLICATION
·
DC/DC Converter
·
Ideal for high-frequency switching and synchronous rectification
·
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±
30
V
ID
Drain Current-Continuous
3
A
IDM
Drain Current-Single Pulsed
6
A
PD
Total Dissipation @TC=25℃
70
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
·
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(j-c)
Junction-to-case thermal resistance
1.79
℃
/W


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