BAS86

SCHOTTKY BARRIER DIODE

FEATURES :

• For general purpose applications.

• This diode features low turn-on voltage. This

device is protected by a PN junction guard ring

against excessive voltage, such as electrostatic

discharges.

• Metal-on-silicon Schottky barrier device which is

protected by a PN junction guard ring.

• The low forward voltage drop and fast switching

make it ideal for protection of MOS devices,

steering, biasing and coupling diodes for fast

switching and low logic level applications

• This diode is also available in the DO-35 case

with type designation BAT86.

• Pb / RoHS Free

MECHANICAL DATA :

Case: MiniMELF Glass Case (SOD-80C)

Weight: approx. 0.05g

Symbol

Value

Unit

Continuous Reverse Voltage

50

V

Continuous Forward Current

200

(1)

mA

Repetitive Peak Forward Current at tp < 1s,

500

(1)

mA

Power Dissipation

200

(1)

mW

Thermal Resistance Junction to Ambient Air

300

(1)

°C/W

Junction Temperature

125

°C

Ambient Operating Temperature Range

Ta

-65 to + 125

°C

Storage temperature range

-65 to + 150

°C

Note: (1) Valid provided that electrodes are kept at ambient temperature.

Parameter

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

50

-

-

V

Reverse Current

-

-

5.0

µA

-

0.275

0.380

Forward Voltage

-

0.365

0.450

Pulse Test tp <300

µs , δ <2%

-

0.460

0.600

-

0.700

0.900

Diode Capacitance

Cd

-

-

8

pF

Page 1 of 1

Rev. 03 : October 19, 2005

Test Condition

Parameter

Reverse Recovery Time

Trr

V

ns

5

-

-

Dimensions in inches and ( millimeters )

0.142(3.6)

0.134(3.4)

0.055 (1.40)

0.019(0.48)

0.011(0.28)

Cathode Mark

MiniMELF (SOD-80C)

Mounting Pad Layout

0.049 (1.25)Min.

0.197 (5.00)

REF

0.098 (2.50)

Max.

0.079 (2.00)Min.

IATF 0060636

SGS TH07/1033

TH09/2479

TH97/2478