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PJM138NSA Datasheet(PDF) 3 Page - Dongguan Pingjingsemi Technology Co., Ltd,

No. de pieza PJM138NSA
Descripción Electrónicos  N- Enhancement Mode Field Effect Transistor
PDF  6 Pages
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Fabricante Electrónico  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Página de inicio  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM138NSA Datasheet(HTML) 3 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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Typical Characteristic Curves
D
S
SD
GS
D
GS
J
Output Characteristics
500
400
Transfer Characteristics
400
320
300
240
200
160
100
80
0
0
1
2
3
4
0
0.8
1.2
1.6
2.0
2.4
Drain to Source Voltage V (V)
Gate to Source Voltage V (V)
R
1.5
DS(ON)——I
DS(ON)
5
——V
4
1.2
3
2
0.9
1
0.6
0.2
0.4
0.6
0.8
0
1
2
3
4
5
Drain Current I (A)
Gate to Source Voltage V (V)
I ——V
1
Threshold Voltage
1.2
0.1
1.0
0.01
0.8
1E-3
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.6
25
50
75
100
125
Source to Drain Voltage V (V)
Juction Temperature T (℃)
Plused
T =125℃
a
T =25℃
a
Ta=25℃
Plused
GS
V =10
GS
V
V =4.5V
a
T =25
a
℃
ID=500mA
Plused
T =125℃
V =1
GS
0V
V =4
GS
V
V =2
GS
V
V =3V
GS
Ta=25℃
Pl sed
V =3V
DS
Plused
T =125℃
a
Ta=25℃
SD
=250uA
I
D
DS
GS
R
PJM138NSA
N- Enhancement Mode Field Effect Transistor
www.pingjingsemi.com
Revision：2.0 Jan-2019



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