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PJM30P30DI Datasheet(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

No. de pieza PJM30P30DI
Descripción Electrónicos  P-Channel Power MOSFET
PDF  4 Pages
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Fabricante Electrónico  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
Página de inicio  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM30P30DI Datasheet(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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PJM30P30DI
P-Channel Power MOSFET
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Revision：1.0 Dec-2018
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Static Parameters
Drain-Source Breakdown Voltage
-BVDSS
-ID=250µA, VGS=0V
30
--
--
V
Zero Gate Voltage Drain Current
-IDSS
-VDS=30V, VGS=0V
--
--
1
µA
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±20V
--
--
±100
nA
Gate Threshold Voltage Note3
-VGS(th)
VGS=VDS, -ID= 250µA
1
--
1.9
V
Static Drain-Source On-Resistance
Note3
RDS(ON)
-VGS=10V, -ID=15A
--
11.5
15
mΩ
Forward Transconductance Note3
gFS
-VDS=5V, -ID=15A
15
--
--
S
Dynamic Parameters
Input Capacitance
Ciss
VGS=0V, -VDS=25V, f=1MHz
--
2130
--
pF
Output Capacitance
Coss
--
302
--
pF
Reverse Transfer Capacitance
Crss
--
227
--
pF
Switching Parameters
Total Gate Charge
Qg
-VGS=10V, -VDD=15V, -ID=20A
--
45.6
--
nC
Gate Source Charge
Qgs
--
4.6
--
nC
Gate Drain Charge
Qgd
--
11.1
--
nC
Turn-On DelayTime
tD(on)
-VGS=10V, -VDD=15V, -ID=15A
RGEN=1Ω
--
12
--
ns
Turn-On Rise Time
tr
--
10
--
ns
Turn-Off DelayTime
tD(off)
--
25
--
ns
Turn-Off Fall Time
tf
--
13
--
ns
Source-Drain Diode Parameters
Body Diode Forward Voltage Note3
-VSD
-IS=30A, VGS=0V
--
--
1.2
V
Body Diode Continuous Source
Current Note2
-IS
--
--
30
A
Notes: 1. Repetitive rating: pulsed width limited by maximum junction temperature.
2. Surface mounted on FR4 board, t≤10sec.
3. Pulse width ≤ 300μs, duty cycle ≤ 2%.
Electrical Characteristics
TC =25
℃ unless otherwise specified.



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