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PJM3407PSA Datasheet(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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PJM3407PSA Datasheet(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 6 page  PJM3407PSA P Enhancement Field Effect Transistor 1 / 6 www.pingjingsemi.com Revision：1.1 Jun-2019 Features VDS=-30V, ID=-4.1A RDS(on)=50mΩ (Typ.)@VGS=-10V High density cell design for ultra low RDS(ON) Low gate charge Applications Load Switch and in PWM Applications SOT-23 1 2 Gate Source 1. Gate 2.Source 3.Drain Marking: R7 Schematic Diagram Drain 3 Absolute Maximum Ratings Ratings at TA =25℃ unless otherwise specified. Parameter Symbol Value Units Drain-Source Voltage -VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current -ID 4.1 A Power Dissipation PD 0.9 W Junction and Storage Temperature Range TJ, TSTG 150, -55 to 150 °C Thermal Characteristics Parameter Symbol Typ. Units Maximum Junction-to-Ambient Note1 RθJA 139 °C/W |
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