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AS7C331MNTD18A-133TQIN Datasheet(PDF) 15 Page - Alliance Semiconductor Corporation |
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AS7C331MNTD18A-133TQIN Datasheet(HTML) 15 Page - Alliance Semiconductor Corporation |
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15 / 18 page ![]() ® AS7C331MNTD18A 12/24/04, v 2.7 Alliance Semiconductor P. 15 of 18 AC test conditions Notes: 1) For test conditions, see “AC test conditions”, Figures A, B, C 2) This parameter measured with output load condition in Figure C. 3) This parameter is sampled, but not 100% tested. 4) tHZOE is less than tLZOE and tHZC is less than tLZC at any given temperature and voltage. 5) tCH measured high above VIH and tCL measured as low below VIL 6) This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must meet the setup and hold times with stable logic levels for all rising edges of CLK when chip is enabled. 7) Write refers to R/W and BW[a,b] . 8) Chip select refers to CE0, CE1, and CE2. Z0 = 50Ω DOUT 50 Ω Figure B: Output load (A) 30 pF* Figure A: Input waveform 10% 90% GND 90% 10% +3.0V • Output load: see Figure B, except for tLZC, tLZOE, tHZOE, tHZC, see Figure C. • Input pulse level: GND to 3V. See Figure A. • Input rise and fall time (measured at 0.3V and 2.7V): 2 ns. See Figure A. • Input and output timing reference levels: 1.5V. VL = 1.5V for 3.3V I/O; = VDDQ/2 for 2.5V I/O Thevenin equivalent: 353 Ω/1538Ω 5 pF* 319 Ω/1667Ω DOUT GND Figure C: Output load(B) *including scope and jig capacitance +3.3V for 3.3V I/O; /+2.5V for 2.5V I/O |
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