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LP1130B Datasheet(PDF) 2 Page - Lowpower Semiconductor inc

No. de pieza LP1130B
Descripción Electrónicos  Half-Bridge IPM
PDF  5 Pages
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Fabricante Electrónico  POWER [Lowpower Semiconductor inc]
Página de inicio  http://www.lowpowersemi.com
Logo POWER - Lowpower Semiconductor inc

LP1130B Datasheet(HTML) 2 Page - Lowpower Semiconductor inc

  LP1130B Datasheet HTML 1Page - Lowpower Semiconductor inc LP1130B Datasheet HTML 2Page - Lowpower Semiconductor inc LP1130B Datasheet HTML 3Page - Lowpower Semiconductor inc LP1130B Datasheet HTML 4Page - Lowpower Semiconductor inc LP1130B Datasheet HTML 5Page - Lowpower Semiconductor inc  
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LP1130B-00
Apr.-2018
Email: marketing@lowpowersemi.com
www.lowpowersemi.com
Page 2 of 5
Preliminary Datasheet
LP1130B
Functional Pin Description
Package Type
Pin Configurations
SOP-8
4
3
2
1
7
5
6
BST
VIN
VCC
EN
PWM
PGND
SWN
8
SWN
Pin
Name
Description
1
BST
Upper MOSFET Floating Bootstrap Supply. A capacitor connected between BST and
SW pins holds this bootstrap voltage for the high-side MOSFET as it is switched. The
recommended capacitor value is between 100nF and 1.0μF. An external diode is
required with the LP1130B.
2
PWM
Logic-Level Input. This pin has primary control of the drive outputs.
3
EN
Active high output enable. When low, normal operation is disabled.
4
VCC
Input Supply. A 1.0μF ceramic capacitor should be connected from this pin to PGND.
5,6
SWN
Switch Node. Connect to the source of the upper MOSFET.
7
PGND
Power Ground. Should be closely connected to the source of the lower MOSFET.
8
VIN
Source for the upper MOSFET



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