KVR16LS11/4

4GB 1Rx8 512M x 64-Bit PC3L-12800

CL11 204-Pin SODIMM

DESCRIPTION

This document describes ValueRAM's 512M x 64-bit (4GB)

DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, low

voltage, memory module, based on eight 512M x 8-bit FBGA

components. The SPD is programmed to JEDEC standard

latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This

204-pin SODIMM uses gold contact fingers. The electrical and

mechanical specifications are as follows:

FEATURES

● JEDEC standard 1.35V (1.28V ~ 1.45V) and

1.5V (1.425V ~1.575V) Power Supply

● VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)

● 800MHz fCK for 1600Mb/sec/pin

● 8 independent internal bank

● Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5

● Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

● 8-bit pre-fetch

● Burst Length: 8 (Interleave without any limit, sequential with starting

address “000” only), 4 with tCCD = 4 which does not allow seamless

read or write [either on the fly using A12 or MRS]

● Bi-directional Differential Data Strobe

● Internal(self) calibration : Internal self calibration through ZQ pin

(RZQ : 240 ohm ± 1%)

● On Die Termination using ODT pin

● Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at

85°C < TCASE ≤ 95°C

● Asynchronous Reset

● PCB: Height1.18” (30mm), double sided component

● Lead Free RoHS Compliant

Document No. VALUERAM1347-001.D00

12/23/16

Page 1

Memory Module Specifications

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SPECIFICATIONS

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Row Cycle Time (tRCmin)

48.125ns (min.)

Refresh to Active/Refresh

260ns (min.)

Command Time (tRFCmin)

Row Active Time (tRASmin)

35ns (min.)

Maximum Operating Power

(1.35V) = 2.376 W*

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Operating Temperature

Storage Temperature

*Power will vary depending on the SDRAM.