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IS25LP032D-RKLE Datasheet(PDF) 51 Page - Integrated Silicon Solution, Inc

No. de pieza IS25LP032D-RKLE
Descripción Electrónicos  SERIAL FLASH MEMORY WITH 133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE
PDF  118 Pages
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Fabricante Electrónico  ISSI [Integrated Silicon Solution, Inc]
Página de inicio  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LP032D-RKLE Datasheet(HTML) 51 Page - Integrated Silicon Solution, Inc

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IS25LP032D
IS25WP032D
Integrated Silicon Solution, Inc.- www.issi.com
51
Rev. A12
08/04/2020
8.10 ERASE OPERATION
The
Erase command sets all bits in the addressed sector or block to “1”s.
The memory array of the device is organized into uniform 4 Kbyte sectors or 32/64 Kbyte uniform blocks (a block
consists of eight/sixteen adjacent sectors respectively).
Before a byte is
reprogrammed, the sector or block that contains the byte must be erased (erasing sets bits to “1”).
In order to erase the device, there are three erase instructions available: Sector Erase (SER), Block Erase (BER)
and Chip Erase (CER). A sector erase operation allows any individual sector to be erased without affecting the
data in other sectors. A block erase operation erases any individual block. A chip erase operation erases the whole
memory array of a device. A sector erase, block erase, or chip erase operation can be executed prior to any
programming operation.



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