HM3400PR datasheet(2/5 Pages) HMSEMI

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HM3400PR

Zero Gate Voltage Drain Current

IDSS

VDS=30V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±12V,VDS=0V

±100

On Characteristics (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

1.4

VGS=2.5V, ID=4A

mΩ

VGS=4.5V, ID=2.9A

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=2.9A

mΩ

Forward Transconductance

gFS

VDS=5V,ID=2.9A

Dynamic Characteristics (Note4)

Input Capacitance

Clss

623

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

VDS=15V,VGS=0V,

F=1.0MHz

Switching Characteristics (Note 4)

Turn-on Delay Time

td(on)

3.3

Turn-on Rise Time

4.8

Turn-Off Delay Time

td(off)

Turn-Off Fall Time

VDD=15V,ID=2.9A

VGS=10V,RGEN=3Ω

Total Gate Charge

9.5

Gate-Source Charge

Qgs

1.5

Gate-Drain Charge

Qgd

VDS=15V,ID=5.8A,

VGS=4.5V

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=2.9A

0.75

1.2

Diode Forward Current (Note 2)

2.9

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 .

4. Guaranteed by design, not subject to production

Shenzhen H&M Semiconductor Co.Ltd

http：//www.hmsemi.com

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