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WSF60100 Datasheet(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSF60100 Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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1 / 5 page ![]() Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Sou rce Voltage ± 20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 1 100 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 1 80 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V 1 14 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V 1 11 A IDM Pulsed Drain Current 2 285 A EAS Single Pulse Avalanche Energy 3 182 mJ IAS Avalanche Current 60 A PD@TC=25℃ Total Power Dissipation 4 150 W PD@TA=25℃ Total Power Dissipation 4 2.5 W TSTG Storage Temperature Range -55 to 1 75 ℃ TJ Operating Junction Temperature Range -55 to 1 75 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient 1 --- 50 ℃ /W RθJC Thermal Resistance Junction-Case 1 --- 1 ℃ /W BVDSS RDSON ID 60V 5.3mΩ 98A Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available General Description Features Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System LCD/LED back light Absolute Maximum Ratings Thermal Data TO -252 Pin Configuration Product Summery The WSF60100 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSF60100 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. N-Ch MOSFET WSF60100 Page 1 www.winsok.tw Dec.2014 |
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