FDMS3602S datasheet(7/15 Pages) ONSEMI

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Typical Characteristics (Q2 N-Channel) T

J = 25 °C unless otherwise noted.

Figure 14. On- Region Characteristics

Figure 15. Normalized on-Resistance vs. Drain

Current and Gate Voltage

Figure 16. Normalized On-Resistance

vs. Junction Temperature

Figure 17. On-Resistance vs. Gate to

Source Voltage

Figure 18. Transfer Characteristics

Figure 19. Source to Drain Diode

Forward Voltage vs. Source Current

0.0

0.2

0.4

0.6

0.8

1.0

100

VGS = 4 V

VGS = 3 V

VGS = 10 V

VGS = 4.5 V

VGS = 3.5 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

VDS, DRAIN TO SOURCE VOLTAGE (V)

020

100

VGS = 3 V

VGS = 3.5 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

ID, DRAIN CURRENT (A)

VGS = 4 V

VGS = 4.5 V VGS = 10 V

-75 -50 -25

75 100 125 150

0.8

1.0

1.2

1.4

1.6

ID = 26 A

VGS = 10 V

TJ, JUNCTION TEMPERATURE (oC)

468

TJ = 125 oC

ID = 26 A

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

1.52.0

2.53.0

3.54.0

100

TJ = 125 oC

VDS = 5 V

PULSE DURATION = 80 μs

DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

VGS, GATE TO SOURCE VOLTAGE (V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.1

100

200

TJ = -55 oC

TJ = 25 oC

TJ = 125 oC

VGS = 0 V

VSD, BODY DIODE FORWARD VOLTAGE (V)

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