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WST03P06 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

No. de pieza WST03P06
Descripción Electrónicos  P-Channel MOSFET
PDF  5 Pages
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Fabricante Electrónico  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Página de inicio  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WST03P06 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

  WST03P06 Datasheet HTML 1Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST03P06 Datasheet HTML 2Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST03P06 Datasheet HTML 3Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST03P06 Datasheet HTML 4Page - Shenzhen Guan Hua Wei Ye Co., Ltd WST03P06 Datasheet HTML 5Page - Shenzhen Guan Hua Wei Ye Co., Ltd  
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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-60
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.021
---
V/℃
VGS=-10V , ID=-2A
---
180
200
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-4.5V , ID=-1A
---
250
m
Ω
VGS(th)
Gate Threshold Voltage
-1.0
-1.5
-3.0
V
△
VGS(th)
VGS(th) Temperature Coefficient
VGS=VDS , ID =-250uA
---
4.08
---
mV/℃
VDS=-48V , VGS=0V , TJ=25℃
---
---
1
IDSS
Drain-Source Leakage Current
VDS=-48V , VGS=0V , TJ=55℃
---
---
5
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-10V , ID=-6A
---
5.8
---
S
Qg
Total Gate Charge (-4.5V)
---
6.3
---
Qgs
Gate-Source Charge
---
2.3
---
Qgd
Gate-Drain Charge
VDS=-20V , VGS=-4.5V , ID=-2A
---
1.8
---
nC
Td(on)
Turn-On Delay Time
---
20
---
Tr
Rise Time
---
33.1
---
Td(off)
Turn-Off Delay Time
---
34
---
Tf
Fall Time
VDD=-15V , VGS=-10V , RG=3.3Ω,
ID=-1A
---
3.8
---
ns
Ciss
Input Capacitance
---
364
Coss
Output Capacitance
---
41
---
Crss
Reverse Transfer Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
12
---
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,4
---
---
-3.5
A
ISM
Pulsed Source Current
2,4
VG=VD=0V , Force Current
---
---
-18
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1.2
V
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
WST03P06
P-Channel MOSFET
Page 2
www.winsok.tw
Dec.2014
200
---



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