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WST05P06 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

No. de pieza WST05P06
Descripción Electrónicos  P-Ch MOSFET
PDF  7 Pages
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Fabricante Electrónico  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Página de inicio  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WST05P06 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-
60
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.014
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-
10V , ID=-4.9A
---
68
85
m
Ω
VGS=-
4.5V , ID=-2.5A
---
80
110
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =-250uA
-0.5
-
0.8
-
1.2
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
3.95
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=-
48V , VGS=0V , TJ=25℃
---
---
-1
uA
VDS=-
48V , VGS=0V , TJ=55℃
---
---
-5
IGSS
Gate-Source Leakage Current
VGS=±
20V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-
2.9A
---
11
---
S
Qg
Total Gate Charge (-4.5V)
VDS=-
30V , VGS=-4.5V , ID=-2.9A
---
11
15.4
nC
Qgs
Gate-Source Charge
---
1.4
2.1
Qgd
Gate-Drain Charge
---
2.4
3.2
Td(on)
Turn-On Delay Time
VDD=-
30V ,
VGS=-4.5V ,
RG=3.3Ω, ID=-
2.9A
---
8.5
16
ns
Tr
Rise Time
---
5.8
11
Td(off)
Turn-Off Delay Time
---
36
65
Tf
Fall Time
---
5.6
11
Ciss
Input Capacitance
VDS=-
30V , VGS=0V , f=1MHz
---
430
560
pF
Coss
Output Capacitance
---
41
66
Crss
Reverse Transfer Capacitance
---
25
35
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,4
VG=VD=0V , Force Current
---
---
-
4.9
A
ISM
Pulsed Source Current
2,4
---
---
-1
1
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=-1A , TJ=25℃
---
---
-1
V
trr
Reverse Recovery Time
IF=-
2.9A , dI/dt=100A/µs ,
TJ=25℃
---
20
---
nS
Qrr
Reverse Recovery Charge
---
19
---
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
WST05P06
P-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014



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