WST2002 datasheet(1/5 Pages) WIINSOK

No. de pieza	WST2002

Descripción Electrónicos	N-Ch MOSFET

PDF	5 Pages

Scroll/Zoom	100%

Fabricante Electrónico	WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]

Página de inicio	http://www.winsok.tw/index.html

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1 / 5 page

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Sou

rce Voltage

±

20

V

ID@TA=25℃

Continuous Drain Current, VGS @ 10V

1

600

mA

ID@TA=70℃

Continuous Drain Current, VGS @ 10V

1

550

mA

IDM

Pulsed Drain Current

2

0.8

A

PD@TA=25℃

Total Power Dissipation

3

0.

15

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

Symbol

Parameter

Typ.

Max.

Unit

RθJA

Thermal Resistance Junction-Ambient

1

---

625

℃

/W

BVDSS

RDSON

ID

30V

7.5Ω

600mA

High-speed switching

Green Device Available

ESD Protected:2KV

General Description

Features

Applications

High Frequency Point-of-Load Synchronous

Buck Converter for MB/NB/UMPC

Networking DC-DC Power System

Load Switch

Absolute Maximum Ratings

Thermal Data

SOT

-723 Pin Configuration

Product Summery

N-Ch MOSFET

Page 1

www.winsok.tw

Dec.2014

WST2002

The WST2002 is the highest performance trench

N-Ch MOSFET with extreme high cell density ,

which provide excellent RDSON and gate charge

for most of the small power switching and load

switch applications.

The WST2002 meet the RoHS and Green

Product requirement with full function reliability

approved.

G

S

D

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WST2002 Datasheet(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

WST2002 Datasheet(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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