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WST2026 Datasheet(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

No. de pieza WST2026
Descripción Electrónicos  N-Channel MOSFET
PDF  5 Pages
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Fabricante Electrónico  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Página de inicio  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WST2026 Datasheet(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
20
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=1mA
---
0.022
---
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=
10V , ID=2A
---
65
85
m
Ω
VGS=
4.5V , ID=1A
---
80
100
VGS(th)
Gate Threshold Voltage
VGS=VDS , ID =250uA
0.5
0.8
1.5
V
△
VGS(th)
VGS(th) Temperature Coefficient
---
-2.33
---
mV/℃
IDSS
Drain-Source Leakage Current
VDS=16V , VGS=0V , TJ=25℃
---
---
1
uA
VDS=16V , VGS=0V , TJ=55℃
---
---
5
IGSS
Gate-Source Leakage Current
VGS=±12V , VDS=0V
---
---
±
100
nA
gfs
Forward Transconductance
VDS=5V , ID=
2A
---
15
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.5
3
Ω
Qg
Total Gate Charge (4.5V)
VDS=15V , VGS=4.5V , ID=
2A
---
7.6
10
nC
Qgs
Gate-Source Charge
---
1.3
2.0
Qgd
Gate-Drain Charge
---
1.7
3.8
Td(on)
Turn-On Delay Time
VDD=10V ,
VGS=4.5V , RG=
6.0Ω
ID=
2A
---
11
22
ns
Tr
Rise Time
---
3.2
6.5
Td(off)
Turn-Off Delay Time
---
22
45
Tf
Fall Time
---
3.0
6.0
Ciss
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
---
391
---
pF
Coss
Output Capacitance
---
87
---
Crss
Reverse Transfer Capacitance
---
60
---
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
1,4
VG=VD=0V , Force Current
---
---
2.0
A
ISM
Pulsed Source Current
2,4
---
---
15
A
VSD
Diode Forward Voltage
2
VGS=0V , IS=1A , TJ=25℃
---
---
1.
0
V
trr
Reverse Recovery Time
IF=
2A , dI/dt=100A/µs , TJ=25℃
---
11
25
nS
Qrr
Reverse Recovery Charge
---
6.8
14
nC
Note :
1.The data tested by surface mounted on a 1 inch
2 FR-4 board with 2OZ copper,t<10sec.
2.The data tested by pulsed , pulse width
≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
WST2026
Page 2
www.winsok.tw
Dec.2014
N-Channel MOSFET



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